发明申请
US20080157354A1 Multiple stacked nanostructure arrays and methods for making the same
审中-公开
多层叠纳米结构阵列及其制造方法
- 专利标题: Multiple stacked nanostructure arrays and methods for making the same
- 专利标题(中): 多层叠纳米结构阵列及其制造方法
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申请号: US11649523申请日: 2007-01-03
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公开(公告)号: US20080157354A1公开(公告)日: 2008-07-03
- 发明人: Fengyan Zhang , Sheng Teng Hsu
- 申请人: Fengyan Zhang , Sheng Teng Hsu
- 专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人: Sharp Laboratories of America, Inc.
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L21/02
摘要:
A method of fabricating a stacked nanostructure array includes preparing a substrate; forming a bottom electrode directly on the substrate; growing a first nanostructure array directly on the bottom electrode; forming an insulating layer on the first nanostructure array; exposing the upper surface of the first nanostructure array; depositing a second, and subsequent, nanostructure array on a nanostructure array immediately below the second and subsequent nanostructure array; repeating said forming, said exposing and said depositing a subsequent steps to form a stacked nanostructure array; removing an uppermost insulating layer; and forming a top electrode on an uppermost nanostructure array. A sensor incorporating the nanostructure array includes top and bottom electrodes with plural layers of nanostructure array therebetween.
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