发明申请
- 专利标题: Method and System for Precise Current Matching in Deep Sub-Micron Technology
- 专利标题(中): 深亚微米技术精密电流匹配方法与系统
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申请号: US11618152申请日: 2006-12-29
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公开(公告)号: US20080157875A1公开(公告)日: 2008-07-03
- 发明人: Arya Behzad , Stephen Chi-Wang Au , Dandan Li
- 申请人: Arya Behzad , Stephen Chi-Wang Au , Dandan Li
- 主分类号: H03F3/04
- IPC分类号: H03F3/04 ; G05F3/02
摘要:
Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.