发明申请
- 专利标题： Etching method using hard mask in semiconductor device
- 专利标题（中）： 在半导体器件中使用硬掩模的蚀刻方法
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申请号： US11801657申请日： 2007-05-10
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公开(公告)号： US20080160771A1公开(公告)日： 2008-07-03
- 发明人: Jae-Seon Yu , Sang-Rok Oh
- 申请人： Jae-Seon Yu , Sang-Rok Oh
- 优先权： KR2007-0000748 20070103
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
An etching method in a semiconductor device includes forming a nitride-based first hard mask layer over a target etch layer, forming a carbon-based second hard mask pattern over the first hard mask layer, etching the first hard mask layer using the second hard mask pattern as an etch barrier to form a first hard mask pattern, cleaning a resultant structure including the first hard mask pattern, and etching the target etch layer using the second hard mask pattern as an etch barrier.
公开/授权文献
- US07807574B2 Etching method using hard mask in semiconductor device 公开/授权日：2010-10-05
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