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发明申请
US20080163928A1 Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material 审中-公开
包含半导体光伏活性材料的光伏电池

Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material
摘要：
The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe   (I) Zn1-xMnxTe   (II) where x is from 0.01 to 0.7, wherein the photovoltaically active semiconductor material comprises a metal halide comprising a metal selected from the group consisting of germanium, tin, antimony, bismuth and copper and a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine
摘要（中）：

本发明涉及一种光伏电池和一种用于生产包括式（I）或（II）的光伏活性半导体材料的光伏电池的方法：<？in-line-formula description =“In-line Formulas”end = “lead”？> ZnTe（I）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”Zn 1-x Mn x Te（II）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中 x为0.01至0.7，其中所述光伏活性半导体材料包括金属卤化物，其包含选自锗，锡，锑，铋和铜的金属和选自氟，氯，溴和 碘

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