公开(公告)号：US20250063848A1

公开(公告)日：2025-02-20

申请号：US18723069

申请日：2022-12-23

Applicant: First Solar, Inc.

Inventor： Tursun Ablekim ,  Sachit Grover ,  James Hack ,  Elline Hettiaratchy ,  Taylor Hill ,  Sergei Kniajanski ,  Wyatt Metzger ,  Nicholas Valdes ,  Gang Xiong

IPC: H01L31/0368 ,  H01L31/0296 ,  H01L31/18

Abstract: Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.

公开(公告)号：US12218173B2

公开(公告)日：2025-02-04

申请号：US18511731

申请日：2023-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu Wei ,  Yen-Liang Lin ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0336

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

公开(公告)号：US12159949B2

公开(公告)日：2024-12-03

申请号：US18322586

申请日：2023-05-23

Applicant: CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED

Inventor： Guodong Chen ,  Yongsheng Guo ,  Weile Lin ,  Yandong Wang ,  Zhaohui Liu

IPC: H01L31/0296 ,  C23C14/35 ,  H01L31/18

Abstract: A method for forming a hole transport layer on a surface of a substrate includes providing M target materials comprising inorganic hole transport materials and forming the hole transport layer on the surface of the substrate using magnetron sputtering. The hold transport layer at least comprises N consecutive sub-layers. M and N are integers and 2≤N≤M. One of the M target materials is a doped target material further comprising a doping material.

公开(公告)号：US12132133B2

公开(公告)日：2024-10-29

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L29/66 ,  G01S7/481 ,  G01S17/931 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/107 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/00 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312

CPC classification number: H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L2031/0344 ,  H01L31/035218

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20240170600A1

公开(公告)日：2024-05-23

申请号：US18511581

申请日：2023-11-16

Applicant: Raytheon Company

Inventor： Jeffrey M. Peterson

IPC: H01L31/103 ,  H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/1032 ,  H01L31/02966 ,  H01L31/1832

Abstract: A HgZnTe detector on a silicon substrate provides significant advantages over conventionally used HgCdTe detectors on silicon substrates, as HgZnTe is a harder material than HgCdTe, and has less lattice mismatch with silicon than HgCdTe. HgZnTe also has a higher dislocation energy than HgCdTe, as well as a higher thermal stability than HgCdTe, making it more resistant to dislocation.

公开(公告)号：US20240154049A1

公开(公告)日：2024-05-09

申请号：US18411782

申请日：2024-01-12

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC: H01L31/0272 ,  C23C14/06 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/0272 ,  C23C14/0629 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/0248 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02562 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US11942490B2

公开(公告)日：2024-03-26

申请号：US17178791

申请日：2021-02-18

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Kuniyuki Kakushima ,  Akito Sasaki ,  Atsuya Sasaki ,  Hideaki Hirabayashi

IPC: H01L27/146 ,  G01T1/24 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/032

CPC classification number: H01L27/14607 ,  G01T1/241 ,  H01L27/14659 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/032

Abstract: A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination θ of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination θ is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.

公开(公告)号：US11921244B2

公开(公告)日：2024-03-05

申请号：US17298539

申请日：2019-11-28

Applicant: OY AJAT LTD.

Inventor： Tuomas Pantsar ,  Jouni Pyyhtiä ,  Dimitrios Chatzistratis ,  Gerasimos Theodoratos ,  Yannis Glikiotis ,  Teemu Pitkänen

IPC: G01T1/24 ,  H01L27/146 ,  H01L31/0272 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304

CPC classification number: G01T1/247 ,  H01L27/14659 ,  H01L31/0272 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304

Abstract: Some embodiments include an imaging system comprising a detector substrate, at least one detector circuit comprising a capacitor coupled with the detector substrate, the capacitor arranged to collect an electrical charge from the detector substrate, and the imaging system further comprises at least one programmable current source, arranged to provide a neutralizing charge to the capacitor, and the imaging system is configured to select a value for the neutralizing charge in dependence of a frame number.

公开(公告)号：US20240072183A1

公开(公告)日：2024-02-29

申请号：US18270126

申请日：2021-12-30

Applicant: LYNRED

Inventor： Nicolas PERE-LAPERNE ,  Alexandre KERLAIN ,  Vincent DESTEFANIS ,  Paul FOUGERES

IPC: H01L31/0296 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/03529 ,  H01L31/1832

Abstract: A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.