发明申请
- 专利标题： Programming method of multi-bit flash memory device for reducing programming error
- 专利标题（中）： 用于减少编程错误的多位闪存器件的编程方法
-
申请号： US12007217申请日： 2008-01-08
-
公开(公告)号： US20080165579A1公开(公告)日： 2008-07-10
- 发明人: Seung-Jae Lee
- 申请人： Seung-Jae Lee
- 优先权： KR10-2007-0002971 20070110
- 主分类号： G11C16/34
- IPC分类号： G11C16/34
摘要：
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
公开/授权文献
信息查询
