发明申请
- 专利标题： SUB-LITHOGRAPHICS OPENING FOR BACK CONTACT OR BACK GATE
- 专利标题（中）： 打开后接触或后盖的子图
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申请号： US12034875申请日： 2008-02-21
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公开(公告)号： US20080166839A1公开(公告)日： 2008-07-10
- 发明人: Theodore W. Houston
- 申请人： Theodore W. Houston
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/28
摘要：
A low resistance buried back contact for SOI devices. A trench is etched in an insulating layer at minimum lithographic dimension, and sidewalls are deposited in the trench to decrease its width to sublithographic dimension. Conducting material is deposited in the trench, which serves as a low-resistance contact to the back side of the device. In another embodiment, the trench-fill material is separated from the device by an insulating layer, and serves as a back gate structure.
公开/授权文献
- US07704811B2 Sub-lithographics opening for back contact or back gate 公开/授权日：2010-04-27
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