发明申请
- 专利标题: High voltage generating circuit and semiconductor memory device having the same and method thereof
- 专利标题(中): 高电压发生电路及其半导体存储器件及其方法
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申请号: US12007721申请日: 2008-01-15
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公开(公告)号: US20080170446A1公开(公告)日: 2008-07-17
- 发明人: Sang-hyuk Kwon , Hi-choon Lee
- 申请人: Sang-hyuk Kwon , Hi-choon Lee
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2007-0004319 20070115
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G05F3/02
摘要:
A high voltage generating circuit may include a pulse signal generator, a counter, a plurality of transmitters, and/or a plurality of pumpers. The pulse signal generator may be configured to be enabled in response to a refresh command signal to output a pulse signal. The counter may be configured to count the pulse signal and sequentially output a plurality of selection signals. The plurality of transmitters may be configured to be sequentially enabled in response to individual selection signals of the plurality of selection signals to transmit the pulse signal. The plurality of pumpers may correspond to the plurality of transmitters. Each of the plurality of pumpers may be configured to collectively generate a high voltage based on the transmitted pulse signal from a corresponding transmitter of the plurality of transmitters.
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