发明申请
- 专利标题: MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE WITH SMOOTHING
- 专利标题(中): 具有平滑性的半导体器件的制造方法
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申请号: US12051502申请日: 2008-03-19
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公开(公告)号: US20080171421A1公开(公告)日: 2008-07-17
- 发明人: Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
- 申请人: Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
- 申请人地址: JP Moriguchi-shi
- 专利权人: SANYO ELECTRIC CO., LTD.
- 当前专利权人: SANYO ELECTRIC CO., LTD.
- 当前专利权人地址: JP Moriguchi-shi
- 优先权: JP2003-046755 20030225; JP2004-026534 20040203
- 主分类号: H01L21/304
- IPC分类号: H01L21/304
摘要:
Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
公开/授权文献
- US07981807B2 Manufacturing method of semiconductor device with smoothing 公开/授权日:2011-07-19