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公开(公告)号：US07981807B2
公开(公告)日：2011-07-19
申请号：US12051502
申请日：2008-03-19
申请人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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公开(公告)号：US20080171421A1
公开(公告)日：2008-07-17
申请号：US12051502
申请日：2008-03-19
申请人： Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira SUZUKI , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/304
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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公开(公告)号：US07371693B2
公开(公告)日：2008-05-13
申请号：US10784888
申请日：2004-02-24
申请人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/461
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。
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公开(公告)号：US20070145590A1
公开(公告)日：2007-06-28
申请号：US11639411
申请日：2006-12-15
申请人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L23/52
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。
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公开(公告)号：US20070210437A1
公开(公告)日：2007-09-13
申请号：US11714906
申请日：2007-03-07
申请人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L23/48
CPC分类号： H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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公开(公告)号：US08766408B2
公开(公告)日：2014-07-01
申请号：US11714906
申请日：2007-03-07
申请人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
发明人： Takashi Noma , Shigeki Otsuka , Yuichi Morita , Kazuo Okada , Hiroshi Yamada , Katsuhiko Kitagawa , Noboru Okubo , Shinzo Ishibe , Hiroyuki Shinogi
IPC分类号： H01L21/00
CPC分类号： H01L23/3128 , H01L21/6835 , H01L21/6836 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L25/105 , H01L2221/68327 , H01L2221/68354 , H01L2224/13 , H01L2224/13099 , H01L2225/1035 , H01L2225/1058 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/3511 , H01L2924/00
摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.
摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。
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公开(公告)号：US07986021B2
公开(公告)日：2011-07-26
申请号：US11639410
申请日：2006-12-15
申请人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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公开(公告)号：US07633133B2
公开(公告)日：2009-12-15
申请号：US11639411
申请日：2006-12-15
申请人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L31/0203 , H01L31/0216 , H01L31/0224
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。
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公开(公告)号：US20070145420A1
公开(公告)日：2007-06-28
申请号：US11639410
申请日：2006-12-15
申请人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L27/148
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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公开(公告)号：US08035215B2
公开(公告)日：2011-10-11
申请号：US11340851
申请日：2006-01-27
申请人： Hiroshi Kanamori , Shigeki Otsuka , Yuichi Morita , Akira Suzuki
发明人： Hiroshi Kanamori , Shigeki Otsuka , Yuichi Morita , Akira Suzuki
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L23/3114 , H01L24/10 , H01L24/13 , H01L27/14636 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05624 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/1434 , H01L2924/15788 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate is etched from its back surface in a position corresponding to a first wiring formed on the semiconductor substrate with a first insulation film therebetween, to form a first opening exposing the first insulation film. Next, the insulation film exposed in the first opening is etched to form a second opening exposing the first wiring, and then the semiconductor substrate is etched to increase a diameter of the first opening and form a first opening having the larger diameter. Then, a second insulation film is formed on the back surface of the semiconductor substrate including on the first wiring through the first and second openings, and then the second insulation film covering the first wiring is etched.
摘要翻译： 本发明旨在防止半导体器件的腐蚀。 在本发明的半导体器件制造方法中，在与半导体衬底上形成的第一布线对应的位置上，从其背面蚀刻半导体衬底，其间具有第一绝缘膜，以形成第一绝缘膜的第一开口。 接着，蚀刻在第一开口中露出的绝缘膜，形成露出第一布线的第二开口，然后蚀刻半导体基板以增加第一开口的直径并形成具有较大直径的第一开口。 然后，通过第一和第二开口在包括第一布线的半导体衬底的背面上形成第二绝缘膜，然后蚀刻覆盖第一布线的第二绝缘膜。
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