发明申请
US20080179600A1 THIN FILM TRANSISTOR, METHOD OF PRODUCING THE SAME, AND DISPLAY DEVICE USING THE THIN FILM TRANSISTOR
审中-公开
薄膜晶体管，其制造方法和使用薄膜晶体管显示器件
- 专利标题： THIN FILM TRANSISTOR, METHOD OF PRODUCING THE SAME, AND DISPLAY DEVICE USING THE THIN FILM TRANSISTOR
- 专利标题（中）： 薄膜晶体管，其制造方法和使用薄膜晶体管显示器件
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申请号： US11954338申请日： 2007-12-12
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公开(公告)号： US20080179600A1公开(公告)日： 2008-07-31
- 发明人: Toru TAKEGUCHI
- 申请人： Toru TAKEGUCHI
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2007-021364 20070131
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/00
摘要：
It is an object to obtain a display device which has a thin film transistor using a semiconductor film, and in which initial failures are reduced, and a high-resolution display due to miniaturization of the thin film transistor is enabled. In a thin film transistor, a gate electrode 6 is formed above a polycrystalline semiconductor film 4 via a gate insulating film 5. A taper angle θ2 of a section of a pattern end portion of the polycrystalline semiconductor film 4 in a region where the polycrystalline semiconductor film 4 and the gate electrode 6 intersect with each other is smaller than a taper angle θ1 of the other region.
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