发明申请
- 专利标题： TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED SEMICONDUCTOR ON INSULATOR SUBSTRATE
- 专利标题（中）： 绝缘体基板上的应变半导体上嵌有硅/锗材料的晶体管
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申请号： US11843358申请日： 2007-08-22
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公开(公告)号： US20080179628A1公开(公告)日： 2008-07-31
- 发明人: Andy Wei , Thorsten Kammler , Roman Boschke , Manfred Horstmann
- 申请人： Andy Wei , Thorsten Kammler , Roman Boschke , Manfred Horstmann
- 优先权： DE102007004861.2 20070131
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/8238
摘要：
By combining a respectively adapted lattice mismatch between a first semiconductor material in a channel region and an embedded second semiconductor material in an source/drain region of a transistor, the strain transfer into the channel region is increased. According to one embodiment of the invention, the lattice mismatch may be adapted by a biaxial strain in the first semiconductor material. According to one embodiment, the lattice mismatch may be adjusted by a biaxial strain in the first semiconductor material. In particular, the strain transfer of strain sources including the embedded second semiconductor material as well as a strained overlayer is increased. According to one illustrative embodiment, regions of different biaxial strain may be provided for different transistor types.
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