发明申请
US20080179670A1 COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
审中-公开
包括具有场电极的MOS晶体管的组件布置
- 专利标题： COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
- 专利标题（中）： 包括具有场电极的MOS晶体管的组件布置
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申请号： US12021709申请日： 2008-01-29
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公开(公告)号： US20080179670A1公开(公告)日： 2008-07-31
- 发明人: Armin Willmeroth , Franz Hirler
- 申请人： Armin Willmeroth , Franz Hirler
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 优先权： DE102007004323.8 20070129
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.