发明申请
US20080179710A1 SEMICONDUCTOR WAFER WITH IMPROVED CRACK PROTECTION 有权
具有改进的裂纹保护的半导体波形

SEMICONDUCTOR WAFER WITH IMPROVED CRACK PROTECTION
摘要:
A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing.
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