发明申请
- 专利标题: SEMICONDUCTOR WAFER WITH IMPROVED CRACK PROTECTION
- 专利标题(中): 具有改进的裂纹保护的半导体波形
-
申请号: US11668453申请日: 2007-01-29
-
公开(公告)号: US20080179710A1公开(公告)日: 2008-07-31
- 发明人: Heng Keong Yip , Wai Yew Lo , Lan Chu Tan
- 申请人: Heng Keong Yip , Wai Yew Lo , Lan Chu Tan
- 主分类号: H01L23/544
- IPC分类号: H01L23/544 ; H01L21/76
摘要:
A method of manufacturing a semiconductor wafer for dicing includes providing a semiconductor wafer including a substrate and a plurality of upper layers on the substrate that form a formation of die areas. The formation is arranged so that adjacent die areas are separated by a path for a dicing tool within each path, a pair of spaced apart lines is fabricated. Each line defines a dicing edge of a respective path and has at least one trench extending between a top surface of the wafer and the substrate. Each trench is filled with a stress absorbing material for reducing die tool induced stress on the die areas during dicing.
公开/授权文献
- US07741196B2 Semiconductor wafer with improved crack protection 公开/授权日:2010-06-22
信息查询
IPC分类: