发明申请
- 专利标题: Anti-Impact memory module
- 专利标题(中): 防冲击内存模块
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申请号: US11657715申请日: 2007-01-25
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公开(公告)号: US20080179731A1公开(公告)日: 2008-07-31
- 发明人: Wen-Jeng Fan
- 申请人: Wen-Jeng Fan
- 专利权人: POWERTECH TECHNOLOGY INC.
- 当前专利权人: POWERTECH TECHNOLOGY INC.
- 主分类号: H01L23/13
- IPC分类号: H01L23/13
摘要:
An anti-impact memory module mainly comprises a multi-layer PWB (Printed Wiring Board), a plurality of memory packages and a plurality of first anti-impact bars. The PWB has two longer sides and two shorter sides. A plurality of gold fingers are disposed along one of the longer sides. The first anti-impact bars are disposed on one surface of the PWB and adjacent to the two shorter sides, which are higher than the memory packages in height. Preferably, at least a second anti-impact bar is formed at another longer side far away from the gold fingers. The first anti-impact bars and/or the second anti-impact bar can be utilized to cushion impact force for preventing the memory module product from damaging while fallen accidentally.
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