发明申请
- 专利标题: BIT RECORDING PROCESS ON FERROELECTRIC MEDIUM USING PROBE OR SMALL CONDUCTIVE STRUCTURE AND RECORDING MEDIUM THEREOF
- 专利标题(中): 使用探头或小导电结构和记录介质对电介质进行位记录处理
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申请号: US11851028申请日: 2007-09-06
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公开(公告)号: US20080180832A1公开(公告)日: 2008-07-31
- 发明人: Seung Bum HONG , Yun Seok Kim , Kwang Soo No , Sung Hoon Choa , Simon Buehlmann , Ji Yoon Kim
- 申请人: Seung Bum HONG , Yun Seok Kim , Kwang Soo No , Sung Hoon Choa , Simon Buehlmann , Ji Yoon Kim
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-0008059 20070125
- 主分类号: G11B21/02
- IPC分类号: G11B21/02
摘要:
A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.
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