发明申请
US20080180860A1 Magnetic thin film and magnetoresistance effect element 审中-公开
磁性薄膜和磁阻效应元件

Magnetic thin film and magnetoresistance effect element
摘要:
In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.
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