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    TMR sensor film using a tantalum insertion layer and systems thereof
    3.
    发明授权
    TMR sensor film using a tantalum insertion layer and systems thereof 有权
    使用钽插入层的TMR传感器膜及其系统

    公开(公告)号：US08570691B2

    公开(公告)日：2013-10-29

    申请号：US13082098

    申请日：2011-04-07

    申请人： Masashige Sato ,  Kojiro Komagaki

    发明人： Masashige Sato ,  Kojiro Komagaki

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3909

    摘要： In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

    摘要翻译： 在一个实施例中，隧道磁阻（TMR）头包括衬底上的引线层，引线层上的晶种层，种子层上方的反铁磁（AFM）层，AFM层上方的第一铁磁层，第二铁磁 在所述第一铁磁层之上的层，在所述第一和第二铁磁层之间的耦合层，所述耦合层引起所述第二铁磁层的磁化耦合到所述第一铁磁层的磁化，所述第二铁磁层上方的固定层， 与固定层或固定层相邻的插入层，固定层上方的阻挡层，阻挡层上方的自由层以及自由层上方的覆盖层。 在另一个实施例中，插入层的厚度为约0.05nm至0.3nm，并且包括Ta，Ti，Hf和/或Zr，并且自由层包括CoFeB。

    Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof
    4.
    发明授权
    Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof 有权
    具有多层被钉扎层和/或具有无定形和结晶层的自由层的磁阻效应头及其系统

    公开(公告)号：US08514527B2

    公开(公告)日：2013-08-20

    申请号：US12955767

    申请日：2010-11-29

    申请人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    发明人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

    摘要翻译： 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。

    MAGNETORESISTIVE EFFECT HEAD HAVING A MULTILAYERED PINNED LAYER OR FREE LAYER AND SYSTEMS THEREOF
    5.
    发明申请
    MAGNETORESISTIVE EFFECT HEAD HAVING A MULTILAYERED PINNED LAYER OR FREE LAYER AND SYSTEMS THEREOF 有权
    具有多层拼接层或其自由层及其系统的磁阻效应头

    公开(公告)号：US20110134563A1

    公开(公告)日：2011-06-09

    申请号：US12955767

    申请日：2010-11-29

    申请人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    发明人： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    IPC分类号： G11B21/02 ,  G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

    摘要翻译： 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。

    TMR SENSOR FILM USING A TANTALUM INSERTION LAYER AND SYSTEMS THEREOF
    6.
    发明申请
    TMR SENSOR FILM USING A TANTALUM INSERTION LAYER AND SYSTEMS THEREOF 有权
    TMR传感器膜使用TANTALUM插入层及其系统

    公开(公告)号：US20120257298A1

    公开(公告)日：2012-10-11

    申请号：US13082098

    申请日：2011-04-07

    申请人： Masashige Sato ,  Kojiro Komagaki

    发明人： Masashige Sato ,  Kojiro Komagaki

    IPC分类号： G11B21/02 ,  G11B5/39

    CPC分类号： G11B5/3909

    摘要： In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

    摘要翻译： 在一个实施例中，隧道磁阻（TMR）头包括衬底上的引线层，引线层上的晶种层，种子层上方的反铁磁（AFM）层，AFM层上方的第一铁磁层，第二铁磁 在所述第一铁磁层之上的层，在所述第一和第二铁磁层之间的耦合层，所述耦合层引起所述第二铁磁层的磁化耦合到所述第一铁磁层的磁化，所述第二铁磁层上方的固定层， 与固定层或固定层相邻的插入层，固定层上方的阻挡层，阻挡层上方的自由层以及自由层上方的覆盖层。 在另一个实施例中，插入层的厚度为约0.05nm至0.3nm，并且包括Ta，Ti，Hf和/或Zr，并且自由层包括CoFeB。

    MAGNETO-RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND MAGNETIC HEAD
    7.
    发明申请
    MAGNETO-RESISTANCE ELEMENT, MANUFACTURING METHOD THEREFOR, AND MAGNETIC HEAD 审中-公开
    磁阻元件及其制造方法及磁头

    公开(公告)号：US20090009913A1

    公开(公告)日：2009-01-08

    申请号：US12164493

    申请日：2008-06-30

    申请人： Kojiro Komagaki

    发明人： Kojiro Komagaki

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3912 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08

    摘要： A tunneling magneto-resistance element has a pinned magnetic layer, a free magnetic layer, a tunnel barrier layer interposed between the pinned magnetic layer and the free magnetic layer, an antiferromagnetic layer that pins a magnetization direction of the pinned magnetic layer, a lower shield layer under the antiferromagnetic layer and a seed layer under the lower shield layer. The lower shield layer causes the antiferromagnetic layer to be oriented in a plane orientation direction that causes a unidirectional anisotropy of the antiferromagnetic layer to be improved. The seed layer causes the lower shield layer to be oriented in a plane orientation direction identical to the plane orientation direction of the antiferromagnetic layer. The gap thickness in the read head can be reduced without impairing the effect of pinning by an antiferromagnetic layer with a pinned magnetic layer.

    摘要翻译： 隧道磁阻元件具有钉扎磁性层，自由磁性层，插入在被钉扎的磁性层和自由磁性层之间的隧道势垒层，引导固定磁性层的磁化方向的反铁磁层，下部屏蔽 反铁磁层下面​​的层和下屏蔽层下的种子层。 下屏蔽层使反铁磁层在面向取向方向上取向，从而提高反铁磁性层的单向各向异性。 种子层使得下屏蔽层在与反铁磁性层的平面取向方向相同的平面取向方向上取向。 可以减小读取头中的间隙厚度，而不会损害具有固定磁性层的反铁磁层的钉扎效果。

    Tunnel magnetoresistive element and manufacturing method thereof
    8.
    发明申请
    Tunnel magnetoresistive element and manufacturing method thereof 审中-公开
    隧道磁阻元件及其制造方法

    公开(公告)号：US20080062582A1

    公开(公告)日：2008-03-13

    申请号：US11710692

    申请日：2007-02-26

    申请人： Kojiro Komagaki

    发明人： Kojiro Komagaki

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3281 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

    摘要： Stable anti-ferromagnetic exchange coupling can be obtained between a first pinned magnetic layer in a magnetoresistive element and a second pinned magnetic layer through smoothing of a non-magnetic intermediate layer, by smoothing the first pinned magnetic layer. The magnetoresistive element is made by sequentially laminating an underlayer, an anti-ferromagnetic layer, the first pinned magnetic layer, the non-magnetic intermediate layer, the second pinned magnetic layer, a tunnel barrier layer, a free magnetic layer, and a protection layer. The first pinned magnetic layer is smoothed before the non-magnetic intermediate layer is laminated over the first pinned magnetic layer. Stable magnetoresistive characteristics can be obtained, even when thickness is reduced, by smoothing the tunnel barrier layer. In that case, excellent magnetoresistive characteristics can also be obtained even when the tunnel barrier layer requires crystal properties.

    摘要翻译： 通过平滑第一固定磁性层，可以通过平滑非磁性中间层在磁阻元件中的第一被钉扎磁性层和第二固定磁性层之间获得稳定的反铁磁交换耦合。 磁阻元件通过依次层叠底层，反铁磁性层，第一被钉扎磁性层，非磁性中间层，第二被钉扎磁性层，隧道势垒层，自由磁性层和保护层 。 在非磁性中间层层叠在第一固定磁性层上之前，使第一固定磁性层平滑化。 即使当厚度减小时，也可以通过平滑隧道势垒层获得稳定的磁阻特性。 在这种情况下，即使隧道势垒层需要晶体性质，也可获得优异的磁阻特性。