发明申请
- 专利标题: Multilayer chip capacitor
- 专利标题(中): 多层片式电容器
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申请号: US12005300申请日: 2007-12-27
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公开(公告)号: US20080180879A1公开(公告)日: 2008-07-31
- 发明人: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 优先权: KR10-2007-0009913 20070131
- 主分类号: H01G4/38
- IPC分类号: H01G4/38
摘要:
A multilayer chip capacitor including: a capacitor body having a plurality of dielectric layers deposited therein and having a parallelepiped shape; at least three pairs of first and second external electrodes formed on two longer sides, the first and second external electrodes in each of the pairs having different polarities and opposing each other, and the first and second external electrodes on each of the longer sides arranged alternately with each other; and a plurality of first and second internal electrodes arranged alternately to interpose each of the dielectric layers, the first and second internal electrodes connected to the first and second external electrodes by leads, respectively, wherein the capacitor body has a length that is 2.5 times greater than a width thereof.
公开/授权文献
- US07733628B2 Multilayer chip capacitor 公开/授权日:2010-06-08
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