发明申请
US20080181008A1 FLASH MEMORY SYSTEM CAPABLE OF IMPROVING ACCESS PERFORMANCE AND ACCESS METHOD THEREOF
审中-公开
能够改善访问性能的FLASH存储器系统及其访问方法
- 专利标题: FLASH MEMORY SYSTEM CAPABLE OF IMPROVING ACCESS PERFORMANCE AND ACCESS METHOD THEREOF
- 专利标题(中): 能够改善访问性能的FLASH存储器系统及其访问方法
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申请号: US11693106申请日: 2007-03-29
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公开(公告)号: US20080181008A1公开(公告)日: 2008-07-31
- 发明人: Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- 申请人: Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- 优先权: KR2007-08025 20070125
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A flash memory system capable of improving an access performance and an access method thereof. The system includes: a flash memory device including a plurality of storage regions; a contents memory storing setting information corresponding to the plurality of storage regions, respectively; and a processing unit setting operation conditions of the flash memory device by referring to the setting information during an access operation for the flash memory device.
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