发明申请
- 专利标题： REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
- 专利标题（中）： 反射掩蔽空白用于EUV LITHOGRAPHY
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申请号： US12028250申请日： 2008-02-08
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公开(公告)号： US20080182183A1公开(公告)日： 2008-07-31
- 发明人: Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
- 申请人： Kazuyuki Hayashi , Kazuo Kadowaki , Takashi Sugiyama
- 申请人地址： JP Chiyoda-ku
- 专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人： ASAHI GLASS COMPANY, LIMITED
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2007-021092 20070131
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F7/26
摘要：
To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.
公开/授权文献
- US07718324B2 Reflective mask blank for EUV lithography 公开/授权日：2010-05-18
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