发明申请
US20080182416A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING POWER AMONG PLURAL VHF SOURCES
失效
通过在多个VHF源上分配功率,在等离子体处理过程中的均匀性
- 专利标题: PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING POWER AMONG PLURAL VHF SOURCES
- 专利标题(中): 通过在多个VHF源上分配功率,在等离子体处理过程中的均匀性
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申请号: US11733764申请日: 2007-04-11
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公开(公告)号: US20080182416A1公开(公告)日: 2008-07-31
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
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