发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11907353申请日： 2007-10-11
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公开(公告)号： US20080185656A1公开(公告)日： 2008-08-07
- 发明人: Masato Koyama , Yoshinori Tsuchiya , Seiji Inumiya
- 申请人： Masato Koyama , Yoshinori Tsuchiya , Seiji Inumiya
- 优先权： JP2007-25653 20070205
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si
公开/授权文献
- US07727832B2 Semiconductor device and method for manufacturing the same 公开/授权日：2010-06-01
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