发明申请
- 专利标题: Memory device and method of fabricating the same
- 专利标题(中): 存储器件及其制造方法
-
申请号: US12007819申请日: 2008-01-16
-
公开(公告)号: US20080185668A1公开(公告)日: 2008-08-07
- 发明人: Min-Sang Kim , Sung-Young Lee , Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Dong-Gun Park
- 申请人: Min-Sang Kim , Sung-Young Lee , Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Dong-Gun Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2007-0004672 20070116
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; H01L21/00
摘要:
A memory device may include a substrate, a bit line, at least a first lower word line, at least a first trap site, a pad electrode, at least a first cantilever electrode, and/or at least a first upper word line. The bit line may be formed on the substrate in a first direction. The first lower word line and the first trap site may be insulated from the bit line and formed in a second direction crossing the bit line. The pad electrode may be insulated at sidewalls of the first lower word line and the first trap site and connected to the bit line. The first cantilever electrode may be formed in the first direction, connected to the pad electrode, floated on the first trap site with at least a first lower vacant space, and/or configured to be bent in a third direction. The first upper word line may be formed on the first cantilever electrode in the second direction with at least a first upper vacant space.