发明申请
- 专利标题： Dielectric Film and Method of Forming the Same
- 专利标题（中）： 介电膜及其形成方法
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申请号： US11883421申请日： 2006-01-20
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公开(公告)号： US20080187747A1公开(公告)日： 2008-08-07
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kazumasa Kawase
- 申请人： Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kazumasa Kawase
- 申请人地址： JP Miyagi
- 专利权人： TOHOKU UNIVERSITY
- 当前专利权人： TOHOKU UNIVERSITY
- 当前专利权人地址： JP Miyagi
- 优先权： JP2005-025648 20050201; JP2005-257946 20050906
- 国际申请： PCT/JP2006/300838 WO 20060120
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/31
摘要：
A dielectric film wherein N in the state of an Si3=≡N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH3, Xe/NH3, Kr/NH3, Ar/N2/H2, Xe/N2/H2 and Kr/N2/H2.
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