发明申请
- 专利标题： LIGHT EMITTING DIODE AND METHOD MAKING THE SAME
- 专利标题（中）： 发光二极管及其制造方法
-
申请号： US12031508申请日： 2008-02-14
-
公开(公告)号： US20080188021A1公开(公告)日： 2008-08-07
- 发明人: Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
- 申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 优先权： TW94104057 20050205
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
公开/授权文献
- US07498185B2 Light emitting diode and method making the same 公开/授权日：2009-03-03
信息查询
IPC分类:
