发明申请
US20080188083A1 Method of forming fine patterns of semiconductor device using double patterning
有权
使用双重图案形成半导体器件精细图案的方法
- 专利标题: Method of forming fine patterns of semiconductor device using double patterning
- 专利标题(中): 使用双重图案形成半导体器件精细图案的方法
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申请号: US11810200申请日: 2007-06-05
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公开(公告)号: US20080188083A1公开(公告)日: 2008-08-07
- 发明人: Kyung-yub Jeon , Myeong-cheol Kim , Hak-sun Lee
- 申请人: Kyung-yub Jeon , Myeong-cheol Kim , Hak-sun Lee
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2007-0012347 20070206
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method of forming fine patterns of a semiconductor device includes double etching by changing a quantity of producing polymer by-products to etch a film with different thicknesses in regions having different pattern densities. In a first etching, reactive ion etching (RIE) is performed upon a buffer layer and a hardmask layer both in a low-density pattern region and a high-density pattern region under a first etching ambient until an etch film is exposed in the low-density pattern region using mask patterns as an etch mask. In second etching for forming the hardmask patterns, using the mask patterns as an etch mask, the hardmask layer is etched until the etch film is exposed in the high-density pattern region while accumulating polymer by-products on the etch film in the low-density pattern region under a second etching ambient having polymer by-products produced greater than in the first etching ambient.