- 专利标题: INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
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申请号: US11670701申请日: 2007-02-02
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公开(公告)号: US20080188090A1公开(公告)日: 2008-08-07
- 发明人: Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
- 申请人: Robert Chen , Canfeng Lai , Xinglong Chen , Weiyi Luo , Zhong Qiang Hua , Siqing Lu , Muhammad Rasheed , Qiwei Liang , Dmitry Lubomirsky , Ellie Y. Yieh
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; C23C16/452
摘要:
A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.