发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11673161申请日： 2007-02-09
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公开(公告)号： US20080191206A1公开(公告)日： 2008-08-14
- 发明人: Po-Lun Cheng
- 申请人： Po-Lun Cheng
- 申请人地址： TW Hsinchu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/336
摘要：
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a first poly-SiGe layer being boron-doped and a second poly-SiGe layer being boron-doped. The substrate has two openings and the gate structure is disposed on the substrate between the openings. The spacer is disposed on the sidewalls of the gate structure and above a portion of the openings. The first poly-SiGe layer is disposed on the surface of the openings in the substrate. The second poly-SiGe layer is disposed on the first poly-SiGe layer, and the top of the second poly-SiGe layer is higher than the surface of the substrate. Moreover, the boron concentration in the first poly-SiGe layer is lower than that in the second poly-SiGe layer.
公开/授权文献
- US07456087B2 Semiconductor device and method of fabricating the same 公开/授权日：2008-11-25
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