发明申请
- 专利标题: TESTKEY DESIGN PATTERN FOR GATE OXIDE
- 专利标题(中): 用于氧化铝的试验设计图案
-
申请号: US11675635申请日: 2007-02-16
-
公开(公告)号: US20080197351A1公开(公告)日: 2008-08-21
- 发明人: Shyh-Fann Ting , Sheng-Hao Lin , Chien-Hsing Lee , Da- Ching Chiou , Sun-Chin Wei , Min-Yi Chang , Cheng-Tung Huang , Tung-Hsing Lee , Tzyy-Ming Cheng
- 申请人: Shyh-Fann Ting , Sheng-Hao Lin , Chien-Hsing Lee , Da- Ching Chiou , Sun-Chin Wei , Min-Yi Chang , Cheng-Tung Huang , Tung-Hsing Lee , Tzyy-Ming Cheng
- 主分类号: H01L23/58
- IPC分类号: H01L23/58
摘要:
A testkey design pattern includes a least one conductive contact, at least one conductive line of a first width vertically and electrically connected to the conductive contact, and at least one pair of source and drain respectively directly connected to each side of the conductive line. The pair of source and drain and part of the conductive line of a first length directly connected to the source and drain form an electronic device. The testkey design patterns are advantageous in measuring capacitance with less error and for better gate oxide thickness extraction.
公开/授权文献
- US08084769B2 Testkey design pattern for gate oxide 公开/授权日:2011-12-27
信息查询
IPC分类: