发明申请
- 专利标题: Semiconductor component comprising a drift zone and a drift control zone
- 专利标题(中): 半导体元件包括漂移区和漂移控制区
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申请号: US11706860申请日: 2007-02-15
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公开(公告)号: US20080197380A1公开(公告)日: 2008-08-21
- 发明人: Stefan Sedlmaier , Anton Mauder , Armin Willmeroth , Franz Hirler
- 申请人: Stefan Sedlmaier , Anton Mauder , Armin Willmeroth , Franz Hirler
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.