发明申请
US20080197448A1 SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
审中-公开
通过SiO 2的液相沉积沉积分离膜
- 专利标题： SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
- 专利标题（中）： 通过SiO 2的液相沉积沉积分离膜
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申请号： US12112549申请日： 2008-04-30
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公开(公告)号： US20080197448A1公开(公告)日： 2008-08-21
- 发明人: Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger , Peter H. Mitchell , Larry Alan Nesbit
- 申请人： Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger , Peter H. Mitchell , Larry Alan Nesbit
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
To isolate two active regions formed on a silicon-on-insulator (SOI) substrate, a shallow trench isolation region is filled with liquid phase deposited silicon dioxide (LPD-SiO2) while avoiding covering the active areas with the oxide. By selectively depositing the oxide in this manner, the polishing needed to planarize the wafer is significantly reduced as compared to a chemical-vapor deposited oxide layer that covers the entire wafer surface. Additionally, the LPD-SiO2 does not include the growth seams that CVD silicon dioxide does. Accordingly, the etch rate of the LPD-SiO2 is uniform across its entire expanse thereby preventing cavities and other etching irregularities present in prior art shallow trench isolation regions in which the etch rate of growth seams exceeds that of the other oxide areas.
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