发明申请
US20080197929A1 Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification 审中-公开
用于高增益放大的共源/共发射极共振共振类型

Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification
摘要:
Radio frequency/millimeter wave integrated circuits (RF/MMICs) that employ a resonance mechanism between an input stage and a transistor are disclosed. The circuits contain an input stage, a transistor; and a transformer connected between either a gate or a base of the transistor and a voltage supply of the input stage. The methods disclosed maximize either a collector current or a drain current of a transistor by placing a transformer between the transistor and a voltage source.
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