发明申请
US20080197929A1 Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification
审中-公开
用于高增益放大的共源/共发射极共振共振类型
- 专利标题: Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification
- 专利标题(中): 用于高增益放大的共源/共发射极共振共振类型
-
申请号: US11996582申请日: 2006-07-31
-
公开(公告)号: US20080197929A1公开(公告)日: 2008-08-21
- 发明人: Mau-Chung Frank Chang , Daquan Huang
- 申请人: Mau-Chung Frank Chang , Daquan Huang
- 申请人地址: US CA Oakland
- 专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址: US CA Oakland
- 国际申请: PCT/US06/29970 WO 20060731
- 主分类号: H03F3/16
- IPC分类号: H03F3/16
摘要:
Radio frequency/millimeter wave integrated circuits (RF/MMICs) that employ a resonance mechanism between an input stage and a transistor are disclosed. The circuits contain an input stage, a transistor; and a transformer connected between either a gate or a base of the transistor and a voltage supply of the input stage. The methods disclosed maximize either a collector current or a drain current of a transistor by placing a transformer between the transistor and a voltage source.
信息查询