发明申请
- 专利标题： Thin film transistor and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12007038申请日： 2008-01-04
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公开(公告)号： US20080203387A1公开(公告)日： 2008-08-28
- 发明人: Dong-hun Kang , Stefanovich Genrikh , I-hun Song , Young-soo Park , Chang-jung Kim
- 申请人： Dong-hun Kang , Stefanovich Genrikh , I-hun Song , Young-soo Park , Chang-jung Kim
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 优先权： KR10-2007-0020528 20070228
- 主分类号： H01L29/221
- IPC分类号： H01L29/221 ; H01L21/441
摘要：
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
公开/授权文献
- US08063421B2 Thin film transistor having a graded metal oxide layer 公开/授权日：2011-11-22
信息查询
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