发明申请
- 专利标题： SOURCE/DRAIN STRESSOR AND METHOD THEREFOR
- 专利标题（中）： 来源/排水压力机及其方法
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申请号： US11680181申请日： 2007-02-28
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公开(公告)号： US20080203449A1公开(公告)日： 2008-08-28
- 发明人: Da Zhang , Brian A. Winstead
- 申请人： Da Zhang , Brian A. Winstead
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method for forming a semiconductor device is provided. The method includes forming a gate structure overlying a substrate. The method further includes forming a sidewall spacer adjacent to the gate structure. The method further includes performing an angled implant in a direction of a source side of the semiconductor device. The method further includes annealing the semiconductor device. The method further includes forming recesses adjacent opposite ends of the sidewall spacer in the substrate to expose a first type of semiconductor material. The method further includes epitaxially growing a second type of semiconductor material in the recesses, wherein the second type of semiconductor material has a lattice constant different from a lattice constant of the first type of semiconductor material to create stress in a channel region of the semiconductor device.
公开/授权文献
- US07572706B2 Source/drain stressor and method therefor 公开/授权日：2009-08-11
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