Invention Application
- Patent Title: On-die termination circuit, method of controlling the same, and ODT synchronous buffer
- Patent Title (中): 片上终端电路,控制方法和ODT同步缓冲器
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Application No.: US12071848Application Date: 2008-02-27
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Publication No.: US20080204071A1Publication Date: 2008-08-28
- Inventor: Dong-jin Lee , Jin-hyung Cho
- Applicant: Dong-jin Lee , Jin-hyung Cho
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2007-0019925 20070227
- Main IPC: H03K19/003
- IPC: H03K19/003 ; G11C7/00 ; G11C8/00

Abstract:
An on-die termination (ODT) circuit may include an ODT synchronous buffer and/or an ODT gate. The ODT synchronous buffer may be configured to generate a synchronous ODT command from an external ODT command in synchronization with a first clock signal delay-locked to an external clock signal. The ODT gate may be configured to generate signals for controlling ODT based on a second clock signal delay-locked to the external clock signal and the synchronous ODT command. The synchronous ODT command may be generated in a disabled period of the second clock signal.
Public/Granted literature
- US07868648B2 On-die termination circuit, method of controlling the same, and ODT synchronous buffer Public/Granted day:2011-01-11
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