发明申请
- 专利标题: On-die termination circuit, method of controlling the same, and ODT synchronous buffer
- 专利标题(中): 片上终端电路,控制方法和ODT同步缓冲器
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申请号: US12071848申请日: 2008-02-27
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公开(公告)号: US20080204071A1公开(公告)日: 2008-08-28
- 发明人: Dong-jin Lee , Jin-hyung Cho
- 申请人: Dong-jin Lee , Jin-hyung Cho
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2007-0019925 20070227
- 主分类号: H03K19/003
- IPC分类号: H03K19/003 ; G11C7/00 ; G11C8/00
摘要:
An on-die termination (ODT) circuit may include an ODT synchronous buffer and/or an ODT gate. The ODT synchronous buffer may be configured to generate a synchronous ODT command from an external ODT command in synchronization with a first clock signal delay-locked to an external clock signal. The ODT gate may be configured to generate signals for controlling ODT based on a second clock signal delay-locked to the external clock signal and the synchronous ODT command. The synchronous ODT command may be generated in a disabled period of the second clock signal.
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