发明申请
- 专利标题: MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF REDUCING CRITICAL CURRENT OF THE SAME
- 专利标题(中): 磁性随机存取存储器和减少其相关电流的方法
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申请号: US11679827申请日: 2007-02-27
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公开(公告)号: US20080205123A1公开(公告)日: 2008-08-28
- 发明人: Te-Ho Wu , Alberto Canizo Cabrera , Lin-Hsiu Ye
- 申请人: Te-Ho Wu , Alberto Canizo Cabrera , Lin-Hsiu Ye
- 申请人地址: TW Douliou City
- 专利权人: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- 当前专利权人: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址: TW Douliou City
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.