发明申请
US20080205145A1 MEMORY CONTROLLER CONTROLLING SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR DEVICE
失效
存储器控制器控制半导体存储器件和半导体器件
- 专利标题: MEMORY CONTROLLER CONTROLLING SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题(中): 存储器控制器控制半导体存储器件和半导体器件
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申请号: US12039254申请日: 2008-02-28
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公开(公告)号: US20080205145A1公开(公告)日: 2008-08-28
- 发明人: Shinichi Kanno , Yosuke Kuroda , Toshio Shirakihara
- 申请人: Shinichi Kanno , Yosuke Kuroda , Toshio Shirakihara
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 优先权: JP2007-050390 20070228
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/06
摘要:
A memory controller controls a semiconductor storage device including nonvolatile memory cells. The controller includes a generating circuit, and a selection circuit. The generating circuit generates first data based on a second data. The selection circuit retains a cumulative value whose each digit is a cumulative result in each bit of data which is already written in the memory cells. The selection circuit selects one of the first data. A selected first data has a better average of digits in a sum of each bit of the selected first data and each digit of the cumulative value than an unselected first data. The selection circuit retains the sum concerning the selected first data as the new cumulative value.
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