发明申请
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11987893申请日： 2007-12-05
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公开(公告)号： US20080206968A1公开(公告)日： 2008-08-28
- 发明人: Unryu Ogawa
- 申请人： Unryu Ogawa
- 申请人地址： JP TOKYO
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2006-353016 20061227; JP2007-298553 20071116
- 主分类号： H01L21/203
- IPC分类号： H01L21/203
摘要：
To create a laminated film of a silicon oxide film and a silicon nitride film, with large current driving force and large dielectric constant. A manufacturing method of a semiconductor device includes: forming an amorphous silicon film on the silicon oxide film; and forming a single crystal silicon film by annealing the amorphous silicon film.
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