公开(公告)号：US08486222B2

公开(公告)日：2013-07-16

申请号：US13239902

申请日：2011-09-22

申请人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

发明人： Tokunobu Akao ,  Unryu Ogawa ,  Masahisa Okuno ,  Shinji Yashima ,  Atsushi Umekawa ,  Kaichiro Minami

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67115 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/68792 ,  H01L29/517

摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

摘要翻译： 基板处理装置包括：处理基板的处理室，设置在处理室内的基板支撑部件，以支撑基板;设置在处理室外部的微波发生器;波导发射端口，被配置为提供由微波产生的微波 发生器进入处理室，其中波导发射端口的中心位置偏离支撑在衬底支撑构件上的衬底的中心位置，并且波导发射端口面向支撑在衬底支撑件上的衬底的前表面的一部分 以及控制单元，被配置为相对于所述波导发射端口改变所述基板支撑构件在水平方向上的相对位置。

公开(公告)号：US20120108080A1

公开(公告)日：2012-05-03

申请号：US13239902

申请日：2011-09-22

申请人： Tokunobu AKAO ,  Unryu OGAWA ,  Masahisa OKUNO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

发明人： Tokunobu AKAO ,  Unryu OGAWA ,  Masahisa OKUNO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

IPC分类号： H01L21/26 ,  H05B6/78 ,  H05B6/64

CPC分类号： H01L21/67115 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/68792 ,  H01L29/517

摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

摘要翻译： 基板处理装置包括：处理基板的处理室，设置在处理室内的基板支撑部件，以支撑基板;设置在处理室外部的微波发生器;波导发射端口，被配置为提供由微波产生的微波 发生器进入处理室，其中波导发射端口的中心位置偏离支撑在衬底支撑构件上的衬底的中心位置，并且波导发射端口面向支撑在衬底支撑件上的衬底的前表面的一部分 以及控制单元，被配置为相对于所述波导发射端口改变所述基板支撑构件在水平方向上的相对位置。

公开(公告)号：US20070062646A1

公开(公告)日：2007-03-22

申请号：US11601697

申请日：2006-11-20

申请人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

发明人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

IPC分类号： H01L21/306

CPC分类号： H01J37/3244 ,  H01J2237/335 ,  H01L21/31116 ,  H01L21/67069

摘要： A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

摘要翻译： 基板处理装置包括处理室和气体供给管线，其中包括由等离子体放电激活的第二气体激活的第一气体的天然氧化物膜去除气体通过气体供给管线供给到处理室，以去除天然气 氧化膜，并且其中所述第一气体和所述第二气体沿着第一方向和第二方向被供应到所述气体供应管线，并且所述第一和第二方向之间的角度范围为约90°至180°。

公开(公告)号：US08334215B2

公开(公告)日：2012-12-18

申请号：US12320767

申请日：2009-02-04

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H01L21/302

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US20090050056A1

公开(公告)日：2009-02-26

申请号：US12057019

申请日：2008-03-27

申请人： Unryu OGAWA ,  Katsuhiko YAMAMOTO ,  Masanori NAKAYAMA

发明人： Unryu OGAWA ,  Katsuhiko YAMAMOTO ,  Masanori NAKAYAMA

IPC分类号： H01L21/30

CPC分类号： H01J37/32091 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/3115 ,  H01L21/3144 ,  H01L21/67115

摘要： A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit.

摘要翻译： 公开了一种使用基板处理装置的基板处理装置和基板制造方法，该基板处理装置以高生产率生产在栅绝缘膜的氮化处理中具有优异电特性的半导体。 用于基板制造方法的基板处理装置包括：处理基板的处理室，产生等离子体的处理室;加热基板的加热单元;气体供给源;以及控制单元，其执行将第 通过处理室向处理室供给到等离子体中的含氮气体，并通过加热单元加热基板;以及第二过程，其在不低于450℃的温度下进一步停止等离子体产生和加热基板 由加热单元。

公开(公告)号：US07045447B2

公开(公告)日：2006-05-16

申请号：US10396323

申请日：2003-03-26

申请人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

发明人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/5093 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202

摘要： A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.

摘要翻译： 一种使用等离子体处理装置的半导体器件制造方法，包括处理室，在处理室中支撑基板的基板支撑体和设置在处理室周围的圆筒形电极和力线形成部件的磁力线，包括成形 然后通过改变衬底支撑体的高频阻抗，然后通过由等离子体活化的活性氮的氮氧化氧化膜，连续地形成氮氧化物膜。

公开(公告)号：US20120129358A1

公开(公告)日：2012-05-24

申请号：US13240545

申请日：2011-09-22

申请人： Unryu OGAWA ,  Masahisa OKUNO ,  Tokunobu AKAO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

发明人： Unryu OGAWA ,  Masahisa OKUNO ,  Tokunobu AKAO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

IPC分类号： H01L21/26 ,  H05B6/80

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/6875 ,  H05B6/806

摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

摘要翻译： 提供了一种能够均匀加热衬底同时减少衬底温度增加以降低热量预算的衬底处理设备和半导体器件的制造方法。 基板处理装置包括：处理室，被配置为处理基板; 安装在所述处理室中以支撑所述基板的基板支撑单元; 微波供给单元，被配置为向由所述基板支撑单元支撑的所述基板的处理表面供给微波，所述微波供给单元包括微波辐射单元，所述微波辐射单元在旋转的同时将从微波源供应的微波辐射到所述处理室; 安装在所述微波供给单元和所述基板支撑单元之间的隔板; 安装在所述基板支撑单元处的冷却单元; 以及控制单元，被配置为至少控制所述基板支撑单元，所述微波提供单元和所述冷却单元。

公开(公告)号：US08066894B2

公开(公告)日：2011-11-29

申请号：US11886529

申请日：2006-03-14

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： B44C1/22

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US20080206968A1

公开(公告)日：2008-08-28

申请号：US11987893

申请日：2007-12-05

申请人： Unryu Ogawa

发明人： Unryu Ogawa

IPC分类号： H01L21/203

CPC分类号： H01L21/02247 ,  H01L21/02252 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/3211 ,  H01L29/513 ,  H01L29/518

摘要： To create a laminated film of a silicon oxide film and a silicon nitride film, with large current driving force and large dielectric constant. A manufacturing method of a semiconductor device includes: forming an amorphous silicon film on the silicon oxide film; and forming a single crystal silicon film by annealing the amorphous silicon film.

摘要翻译： 为了制造具有大电流驱动力和大介电常数的氧化硅膜和氮化硅膜的叠层膜。 半导体器件的制造方法包括：在氧化硅膜上形成非晶硅膜; 以及通过退火所述非晶硅膜形成单晶硅膜。

公开(公告)号：US20120108061A1

公开(公告)日：2012-05-03

申请号：US13242690

申请日：2011-09-23

申请人： Tokunobu AKAO ,  Unryu OGAWA ,  Masahisa OKUNO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

发明人： Tokunobu AKAO ,  Unryu OGAWA ,  Masahisa OKUNO ,  Shinji YASHIMA ,  Atsushi UMEKAWA ,  Kaichiro MINAMI

IPC分类号： H01L21/285 ,  C23C16/511

CPC分类号： H01L21/28194 ,  H01L21/67109 ,  H01L21/67115

摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.

摘要翻译： 一种基板处理装置，包括：处理室，被配置为处理具有包括电介质的前表面的基板，设置在所述处理室内的基板支撑构件以支撑所述基板;微波供给单元，被配置为将微波提供给 所述基板支撑在所述基板支撑构件上; 以及导电基板冷却单元，其设置在所述基板的背面侧，所述基板支撑在所述基板支撑构件上，并具有面向所述基板的背面的相对面。 衬底支撑构件的顶部和衬底冷却单元的相对表面之间的距离对应于当衬底被处理时提供的微波的1/4倍数的奇数倍。