发明申请
US20080206996A1 SIDEWALL IMAGE TRANSFER PROCESSES FOR FORMING MULTIPLE LINE-WIDTHS
失效
用于形成多个线宽的平面图像传输过程
- 专利标题: SIDEWALL IMAGE TRANSFER PROCESSES FOR FORMING MULTIPLE LINE-WIDTHS
- 专利标题(中): 用于形成多个线宽的平面图像传输过程
-
申请号: US11680204申请日: 2007-02-28
-
公开(公告)号: US20080206996A1公开(公告)日: 2008-08-28
- 发明人: Toshiharu Furukawa , John G. Gaudiello , Mark Charles Hakey , David Vaclav Horak , Charles William Koburger
- 申请人: Toshiharu Furukawa , John G. Gaudiello , Mark Charles Hakey , David Vaclav Horak , Charles William Koburger
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method for simultaneously forming multiple line-widths, one of which is less than that achievable employing conventional lithographic techniques. The method includes providing a structure which includes a memory layer and a sidewall image transfer (SIT) layer on top of the memory layer. Then, the SIT layer is patterned resulting in a SIT region. Then, the SIT region is used as a blocking mask during directional etching of the memory layer resulting in a first memory region. Then, a side wall of the SIT region is retreated a retreating distance D in a reference direction resulting in a SIT portion. Said patterning comprises a lithographic process. The retreating distance D is less than a critical dimension CD associated with the lithographic process. The SIT region includes a first dimension W2 and a second dimension W3 in the reference direction, wherein CD