Improved reliability high endurance non-volatile memory device with zone-based non-volatile memory file system is described. According to one aspect of the present invention, a zone-based non-volatile memory file system comprises a two-level address mapping scheme: a first level address mapping scheme maps linear or logic address received from a host computer system to a virtual zone address; and a second level address mapping scheme maps the virtual zone address to a physical zone address of a non-volatile memory module. The virtual zone address represents a number of zones each including a plurality of data sectors. Zone is configured as a unit smaller than data blocks and larger than data pages. Each of the data sector consists of 512-byte of data. The ratio between zone and the sectors is predefined by physical characteristics of the non-volatile memory module. A tracking table is used for correlating the virtual zone address with the physical zone address. Data programming and erasing are performed in a zone basis.