发明申请
- 专利标题： SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD
- 专利标题（中）： 基板加热装置和半导体制造方法
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申请号： US11951807申请日： 2007-12-06
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公开(公告)号： US20080213988A1公开(公告)日： 2008-09-04
- 发明人: Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
- 申请人： Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2006-331251 20061208; JP2007-294859 20071113
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; F26B19/00
摘要：
A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
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