公开(公告)号：US20100111512A1

公开(公告)日：2010-05-06

申请号：US12613288

申请日：2009-11-05

申请人： Akira Kumagai ,  Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami

发明人： Akira Kumagai ,  Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami

IPC分类号： F27B5/06

CPC分类号： G01J5/60 ,  G01J5/62

摘要： An object of the present invention is to provide a heating process apparatus capable of being controlled to a constant temperature and to temperatures in a high-temperature range higher than or equal to a 1850 degrees. A heating process apparatus includes: a process chamber; a heat-processed object support member provided in the process chamber; a heater provided inside the heat-processed object support member; and temperature measuring means for measuring the temperature of the heat-processed object support member; wherein the temperature measuring means is provided outside a transmissive window provided in a peripheral wall of the process chamber and through which infrared energy radiated from the heat-processed object support member can be transmitted; and the temperature measuring means comprises a collector collecting infrared energy radiated from the heat-processed object support member and a calculating unit calculating temperature based on the ratio between the intensities of two wavelengths in the infrared.

摘要翻译： 本发明的目的是提供一种加热处理装置，其能够被控制在高于或等于1850度的高温范围内的恒定温度和温度。 一种加热处理装置，包括：处理室; 设置在处理室中的热处理对象支撑构件; 设置在热处理对象支撑部件内的加热器; 以及用于测量加热物体支撑构件的温度的温度测量装置; 其中所述温度测量装置设置在设置在所述处理室的周壁中的透射窗外部，并且可以透射从所述热处理对象支撑构件辐射的红外能量; 并且所述温度测量装置包括收集从所述热处理对象支撑构件辐射的红外能量的收集器，以及基于所述红外线中的两个波长的强度之间的比率来计算温度的计算单元。

公开(公告)号：US20090191724A1

公开(公告)日：2009-07-30

申请号：US12360378

申请日：2009-01-27

申请人： Masami Shibagaki ,  Hiroshi Doi ,  Akihiro Egami ,  Toshiaki Sasaki ,  Shinya Hasegawa

发明人： Masami Shibagaki ,  Hiroshi Doi ,  Akihiro Egami ,  Toshiaki Sasaki ,  Shinya Hasegawa

IPC分类号： H01L21/26 ,  F27D11/00

CPC分类号： H01L21/68742 ,  F27B17/0025 ,  H01L21/67098 ,  H01L21/67115

摘要： A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.

摘要翻译： 具有加热基板的导电加热器的基板加热装置包括布置在导电加热器中并连接到灯丝电源以产生热电子的灯丝，以及加速灯丝和导电加热器之间的热电子的加速电源。 所述灯丝具有沿着与所述基板同心的内圆周以预定间隔形成的内周部，外周部以与所述内圆同心的外圆形以预定间隔形成，并且具有比所述内圆更大的直径， 通过连接每个内周部的端点和相应的一个外周部的端点而形成的区域。

公开(公告)号：US20110174221A1

公开(公告)日：2011-07-21

申请号：US13064484

申请日：2011-03-28

申请人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

发明人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

IPC分类号： C23C16/52 ,  C23C16/50

CPC分类号： H01J37/32623 ,  H01J37/32688 ,  Y10T428/24

摘要： This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

公开(公告)号：US20110155059A1

公开(公告)日：2011-06-30

申请号：US12974245

申请日：2010-12-21

申请人： Akihiro Egami ,  Toshikazu Nakazawa ,  Katsuhiro Suzuki ,  Shinya Hasegawa

发明人： Akihiro Egami ,  Toshikazu Nakazawa ,  Katsuhiro Suzuki ,  Shinya Hasegawa

IPC分类号： C23C16/50 ,  C23C16/00

CPC分类号： C23C14/564 ,  C23C14/0036 ,  C23C14/34 ,  C23C16/4401 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/026 ,  H01J2237/0268

摘要： The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

摘要翻译： 本发明人进行了测试，发现为了防止粘附膜的剥离，将曲率半径设定为等于或大于预定阈值不是重要的。 本发明的发明人还发现，粘合膜的剥离发生在屏蔽的曲率变化的区域中，并且当屏蔽的曲率变化小时不太可能发生。 因此，问题的关键在于屏蔽体的曲率变化的大小，因此逐渐改变曲率使得可以抑制曲率的大的变化，从而防止粘附膜的剥离没有任何缺点 例如由于屏蔽件的尺寸增加而可能发生的膜厚分布的劣化。

公开(公告)号：US07897523B2

公开(公告)日：2011-03-01

申请号：US12360378

申请日：2009-01-27

申请人： Masami Shibagaki ,  Hiroshi Doi ,  Akihiro Egami ,  Toshiaki Sasaki ,  Shinya Hasegawa

发明人： Masami Shibagaki ,  Hiroshi Doi ,  Akihiro Egami ,  Toshiaki Sasaki ,  Shinya Hasegawa

IPC分类号： H01L21/311 ,  F27D11/00

CPC分类号： H01L21/68742 ,  F27B17/0025 ,  H01L21/67098 ,  H01L21/67115

摘要： A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.

摘要翻译： 具有加热基板的导电加热器的基板加热装置包括布置在导电加热器中并连接到灯丝电源以产生热电子的灯丝，以及加速灯丝和导电加热器之间的热电子的加速电源。 所述灯丝具有沿着与所述基板同心的内圆周以预定间隔形成的内周部，外周部以与所述内圆同心的外圆形以预定间隔形成，并且具有比所述内圆更大的直径， 通过连接每个内周部的端点和相应的一个外周部的端点而形成的区域。

公开(公告)号：US20080113149A1

公开(公告)日：2008-05-15

申请号：US12003456

申请日：2007-12-26

申请人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

发明人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

IPC分类号： B32B7/00

CPC分类号： H01J37/32623 ,  H01J37/32688 ,  Y10T428/24

摘要： This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

摘要翻译： 该表面处理装置具有排列有等离子体的反应器和配置有等离子体的表面的基板，以及分配在反应器的内部空间中产生点尖点磁场的磁铁板，其中， 产生等离子体。 磁体板具有多个磁体。 这些磁体通过蜂窝状晶格结构排列在圆形平面中并且平行于基板的表面。 每个磁体的一个磁极端面设置在圆形平面上形成六边形形状的每个格子点的位置。 两个邻接的磁体的磁极端面的极性被布置成交替地相反。 磁体板可以设置有通过形成正方形的格子结构排列的多个磁体，并且排列在最外侧区域的一些磁体的磁力（矫顽力）减小。 因此，即使在周边边缘，内部空间中的点尖点磁场的周期性仍然尽可能地保持，并且周边边缘周期性被扰动的区域处的磁场分布的不对称性减小 。

公开(公告)号：US08007633B2

公开(公告)日：2011-08-30

申请号：US13064484

申请日：2011-03-28

申请人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

发明人： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01J37/32623 ,  H01J37/32688 ,  Y10T428/24

摘要： This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

摘要翻译： 该表面处理装置具有排列有等离子体的反应器和配置有等离子体的表面的基板，以及分配在反应器的内部空间中产生点尖点磁场的磁铁板，其中， 产生等离子体。 磁体板具有多个磁体。 这些磁体通过蜂窝状晶格结构排列在圆形平面中并且平行于基板的表面。 每个磁体的一个磁极端面设置在圆形平面上形成六边形形状的每个格子点的位置。 两个邻接的磁体的磁极端面的极性被布置成交替地相反。 磁体板可以设置有通过形成正方形的格子结构排列的多个磁体，并且排列在最外侧区域的一些磁体的磁力（矫顽力）减小。 因此，即使在周边边缘，内部空间中的点尖点磁场的周期性仍然尽可能地保持，并且周边边缘周期性被扰动的区域处的磁场分布的不对称性减小 。

公开(公告)号：US08198182B2

公开(公告)日：2012-06-12

申请号：US13009373

申请日：2011-01-19

申请人： Masami Shibagaki ,  Akihiro Egami

发明人： Masami Shibagaki ,  Akihiro Egami

IPC分类号： H01L21/265

CPC分类号： H01L21/046 ,  H01L21/0465 ,  H01L21/67109 ,  H01L29/66068

摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.

摘要翻译： 在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性 的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。

公开(公告)号：US08150243B2

公开(公告)日：2012-04-03

申请号：US12613288

申请日：2009-11-05

申请人： Akira Kumagai ,  Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami

发明人： Akira Kumagai ,  Masami Shibagaki ,  Kenji Numajiri ,  Akihiro Egami

IPC分类号： A21B2/00

CPC分类号： G01J5/60 ,  G01J5/62

摘要： A heating process apparatus includes a process chamber, a heat-processed object support member provided in the process chamber for heating a substrate disposed thereon, a cap for covering the substrate disposed on the heat-processed object support member, a heater for heating the heat-processed object support member, a temperature measuring unit for measuring the temperature of the heat-processed object support member, and a controller for controlling the heater. A first measuring unit measures a temperature of the cap, and the controller controls the heater so as to set the cap temperature to a predetermined temperature. A second measuring unit measures a temperature of the heat-processed object support member, and the controller turns off the heater when the temperature of the heat-processed object support member exceeds an over-heat critical temperature.

摘要翻译： 加热处理装置包括处理室，设置在处理室中的用于加热其上设置的基板的热处理对象支撑构件，用于覆盖设置在热处理对象支撑构件上的基板的盖，用于加热热量的加热器 加工对象支撑构件，用于测量加热对象支撑构件的温度的温度测量单元，以及用于控制加热器的控制器。 第一测量单元测量盖的温度，并且控制器控制加热器，以将盖温度设定到预定温度。 第二测量单元测量热处理对象支撑构件的温度，并且当热处理对象支撑构件的温度超过过热临界温度时，控制器关闭加热器。

公开(公告)号：US20110121317A1

公开(公告)日：2011-05-26

申请号：US13009373

申请日：2011-01-19

申请人： Masami Shibagaki ,  Akihiro Egami

发明人： Masami Shibagaki ,  Akihiro Egami

IPC分类号： H01L29/161 ,  H01L21/265

CPC分类号： H01L21/046 ,  H01L21/0465 ,  H01L21/67109 ,  H01L29/66068

摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.

摘要翻译： 在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性 的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。