发明申请
US20080214007A1 METHOD FOR REMOVING DIAMOND LIKE CARBON RESIDUE FROM A DEPOSITION/ETCH CHAMBER USING A PLASMA CLEAN
审中-公开
使用等离子体清洁从沉积/蚀刻室中除去钻石类碳残留物的方法
- 专利标题: METHOD FOR REMOVING DIAMOND LIKE CARBON RESIDUE FROM A DEPOSITION/ETCH CHAMBER USING A PLASMA CLEAN
- 专利标题(中): 使用等离子体清洁从沉积/蚀刻室中除去钻石类碳残留物的方法
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申请号: US11681582申请日: 2007-03-02
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公开(公告)号: US20080214007A1公开(公告)日: 2008-09-04
- 发明人: Maria Wang , Erika Leigh Shoemaker , Mary Roby , Stuart Jacobsen
- 申请人: Maria Wang , Erika Leigh Shoemaker , Mary Roby , Stuart Jacobsen
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
Provided is a method for removing diamond like carbon residue from a deposition chamber. This method, in one embodiment, may include subjecting a deposition chamber including diamond like carbon residue to a plasma clean in the presence of fluorine containing gas and oxygen containing gas. The method may further include purging the deposition chamber having been subjected to the plasma clean with an inert gas, and pumping the deposition chamber having been subjected to the plasma clean.
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