发明申请
- 专利标题： ELECTRICAL FUSE STRUCTURE FOR HIGHER POST-PROGRAMMING RESISTANCE
- 专利标题（中）： 用于更高后编程电阻的电熔丝结构
-
申请号： US11683071申请日： 2007-03-07
-
公开(公告)号： US20080217733A1公开(公告)日： 2008-09-11
- 发明人: Subramanian S. Iyer , Deok-Kee Kim , Chandrasekara Kothandaraman , Byeongju Park
- 申请人： Subramanian S. Iyer , Deok-Kee Kim , Chandrasekara Kothandaraman , Byeongju Park
- 申请人地址： unknown N Armonk
- 专利权人： Inernational Business Machines Corporation
- 当前专利权人： Inernational Business Machines Corporation
- 当前专利权人地址： unknown N Armonk
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.