发明申请
- 专利标题: Design techniques for stacking identical memory dies
- 专利标题(中): 堆叠相同内存模块的设计技术
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申请号: US11716104申请日: 2007-03-09
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公开(公告)号: US20080220565A1公开(公告)日: 2008-09-11
- 发明人: Chao-Shun Hsu , Louis Liu , Clinton Chao , Mark Shane Peng
- 申请人: Chao-Shun Hsu , Louis Liu , Clinton Chao , Mark Shane Peng
- 主分类号: H01L21/50
- IPC分类号: H01L21/50
摘要:
A semiconductor structure includes a first semiconductor die and a second semiconductor die identical to the first semiconductor die. The first semiconductor die includes a first identification circuit; and a first plurality of input/output (I/O) pads on the surface of the first semiconductor die. The second semiconductor die includes a second identification circuit, wherein the first and the second identification circuits are programmed differently from each other; and a second plurality of I/O pads on the surface of the second semiconductor die. Each of the first plurality of I/O pads is vertically aligned to and connected to one of the respective second plurality of I/O pads. The second semiconductor die is vertically aligned to and bonded on the first semiconductor die.
公开/授权文献
- US07494846B2 Design techniques for stacking identical memory dies 公开/授权日:2009-02-24
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