发明申请
US20080220594A1 Fabrication method of a mixed substrate and use of the substrate for producing circuits
有权
混合基板的制造方法和用于制造电路的基板的使用
- 专利标题: Fabrication method of a mixed substrate and use of the substrate for producing circuits
- 专利标题(中): 混合基板的制造方法和用于制造电路的基板的使用
-
申请号: US12071886申请日: 2008-02-27
-
公开(公告)号: US20080220594A1公开(公告)日: 2008-09-11
- 发明人: Laurent Clavelier , Cyrille Le Royer , Jean-Francois Damlencourt
- 申请人: Laurent Clavelier , Cyrille Le Royer , Jean-Francois Damlencourt
- 申请人地址: FR PARIS
- 专利权人: COMMISSARIAT A L' ENERGIE ATOMIQUE
- 当前专利权人: COMMISSARIAT A L' ENERGIE ATOMIQUE
- 当前专利权人地址: FR PARIS
- 优先权: FR0701587 20070305
- 主分类号: H01L21/321
- IPC分类号: H01L21/321
摘要:
The fabrication method of a mixed substrate comprising a tensile strained silicon-on-insulator portion and a compressive strained germanium-on-insulator portion comprises a first step of producing a strained silicon-on-insulator base substrate comprising first and second tensile strained silicon zones. After the base substrate has been produced, the method comprises the successive steps of masking the first tensile strained silicon zone forming the tensile strained silicon-on-insulator portion of the substrate, of performing germanium enrichment treatment of the second tensile strained silicon zone of the base substrate until a compressive strained germanium layer is obtained forming said compressive strained germanium-on-insulator portion of the substrate, and of removing the masking.
公开/授权文献
信息查询
IPC分类: