发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US11835455申请日: 2007-08-08
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公开(公告)号: US20080223522A1公开(公告)日: 2008-09-18
- 发明人: Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
- 申请人: Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
- 优先权: JP2007-068671 20070316
- 主分类号: H01L21/306
- IPC分类号: H01L21/306
摘要:
The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.