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1.发明授权公开(公告)号：US08029874B2
公开(公告)日：2011-10-04
申请号：US12035759
申请日：2008-02-22
IPC分类号： H05H1/24
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力 这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。
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2.发明申请Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开具有降低粒子污染的半导体器件制造装置公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。
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公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译： 一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度 控制电脑。
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公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译： 本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。 根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料 峰值功率密度。
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公开(公告)号：US20080223522A1
公开(公告)日：2008-09-18
申请号：US11835455
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32091 , H01J37/32935 , H01J37/32963
摘要： The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.
摘要翻译： 本发明提供了一种等离子体处理室，即使温度计没有安装在处理室中也能够确定处理室中的温度上升的状态。 一种等离子体处理装置，包括：处理室，用于对待处理的样品进行等离子体处理; 用于向处理室供应气体的装置; 用于减少处理室中的压力的排气装置; 用于产生等离子体的高频电源; 和放置有待处理样品的电极，设置有用于确定升温放电终点的等离子体发射监测器和用于确定升温放电终点的装置，两者用于确定终点 在等离子体处理之前进行的升温放电点。
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公开(公告)号：US20070023398A1
公开(公告)日：2007-02-01
申请号：US11355165
申请日：2006-02-16
CPC分类号： H01J37/32678 , H01J37/32027 , H01J37/32082 , H01J37/32706 , H01J2237/335
摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
摘要翻译： 提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。 等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。
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公开(公告)号：US20060254717A1
公开(公告)日：2006-11-16
申请号：US11213737
申请日：2005-08-30
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , C23F4/00 , H01J37/32009 , H01J37/32532 , H01L21/02087 , H01L21/67109 , H01L21/6831 , H01L21/68707 , H01L21/68742
摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.
摘要翻译： 等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在 所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源， 外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。
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公开(公告)号：US09150964B2
公开(公告)日：2015-10-06
申请号：US12191373
申请日：2008-08-14
IPC分类号： C23C14/00 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译： 通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量。 用于容纳气体扩散器的气体扩散室安装在真空处理装置中。
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公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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10.发明申请公开(公告)号：US20090183683A1
公开(公告)日：2009-07-23
申请号：US12035759
申请日：2008-02-22
IPC分类号： C23C16/455 , B05C11/02 , B05C9/00 , H01L21/306
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得喷淋板的背侧的压力成为压力 这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。
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